An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

Plots of (a) y_m versus V_BG, and (b) comparisons of extracted V_THF between the dg_m/dV_FG method and our model (Eq. (19)).