An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

Potential profiles in the full depletion region along x = 0 (see Fig. 1) each as a function of back gate voltage for devices with (a) W_fin = 100 nm and (b) W_fin = 9 nm. N_D = 10¹⁹ cm⁻³, and T_si = 9 nm.