Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
Chen Yan-Wen1, †, 
, Tan Zhen2, †, , Zhao Lian-Feng2, 3, Wang Jing2, Liu Yi-Zhou1, Si Chen4, Yuan Fang2, Duan Wen-Hui1, Xu Jun2, ‡,
, Tan Zhen2, †, , Zhao Lian-Feng2, 3, Wang Jing2, Liu Yi-Zhou1, Si Chen4, Yuan Fang2, Duan Wen-Hui1, Xu Jun2, ‡, (a) Density of states with and without 2% biaxial compressive strain. (b) Modulation of the valence band maximum.
