Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
Chen Yan-Wen1, †, 
, Tan Zhen2, †, , Zhao Lian-Feng2, 3, Wang Jing2, Liu Yi-Zhou1, Si Chen4, Yuan Fang2, Duan Wen-Hui1, Xu Jun2, ‡,
, Tan Zhen2, †, , Zhao Lian-Feng2, 3, Wang Jing2, Liu Yi-Zhou1, Si Chen4, Yuan Fang2, Duan Wen-Hui1, Xu Jun2, ‡, Carrier effective mass as a function of the biaxial compressive strain for the (a) heavy hole band, (b) light hole band, (c) spin–orbit split band, and (d) electron band. The calculated effective mass is in units of the free electron mass.
