Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
Li Liuan1, Zhang Jiaqi2, Liu Yang1, †, , Ao Jin-Ping2, ‡,
       

The current–voltage (a) and transfer (b) characteristics of HFETs and MOS-HFETs.