Control of symmetric properties of metamorphic In<sub>0.27</sub>Ga<sub>0.73</sub>As layers by substrate misorientation

Control of symmetric properties of metamorphic In_0.27Ga_0.73As layers by substrate misorientation

Yu Shu-Zhen¹, Dong Jian-Rong^{1, †,}, Sun Yu-Run¹, Li Kui-Long^{1, 2}, Zeng Xu-Lu^{1, 2}, Zhao Yong-Ming¹, Yang Hui¹

Optical microscopic and AFM images of In_0.27Ga_0.73As layers grown on GaAs (001) substrates misoriented 2° ((a) and (d)), 7° ((b) and (e)), and 15° ((c) and (f)) toward (111)A.