Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

Song Qing-Wen^{1, 2, †,}, Tang Xiao-Yan^{2, ‡,}, He Yan-Jing², Tang Guan-Nan², Wang Yue-Hu², Zhang Yi-Meng², Guo Hui², Jia Ren-Xu², Lv Hong-Liang², Zhang Yi-Men², Zhang Yu-Ming²

Distribution of interface state density (D_it) near the conduction band edge (E_c) of 4H–SiC estimated using the hi-lo C–V method.