Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Huang Pengcheng1, Chen Shuming1, 2, †, , Chen Jianjun1
       

P-hit current transient with ion strike at gate center with the LET of 20 MeV·cm2/mg, (a) for off-state P0 in Fig. 1, (b) for off-state P2 in Fig. 1.