Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
Zhang Cheng, Hui-Qing Sun†, 
, Li Xu-Na, Sun Hao, Fan Xuan-Cong, Zhang Zhu-Ding, Guo Zhi-You
, Li Xu-Na, Sun Hao, Fan Xuan-Cong, Zhang Zhu-Ding, Guo Zhi-You (a) Radiative recombination rates and (b) spontaneous (Sp.) emission rates for two LEDs at 120 mA.
