Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method
Fan Ji-Bin1, 2, †, , Ding Xiao-Fu1, Liu Hong-Xia2, Xie Peng-Fei1, Zhang Yuan-Tao1, Liao Qing-Liang1
       

The XPS core-level spectra of the Ge3d for HfO2 deposited on the Ge substrate (sample A) and Ge substrate after an improved SRPO treatment (sample B). Curve fitting is used to ensure high accuracy binding energy of the peak.