Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
Jiang Zhi†, , Zhuang Yi-Qi, Li Cong, Wang Ping, Liu Yu-Qi
       

TAT characteristics of the DG-nTFET, showing variable interface trap density Dit with uniquely different temperature dependences in a range of 280 K–380 K. (a) Influence of trap location (gate/channel) on the TAT characteristic. (b) Influence of trap location (source/channel) on the TAT characteristic.