A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

Zhang Yan-Hui¹, Wei Jie¹, Yin Chao¹, Tan Qiao¹, Liu Jian-Ping¹, Li Peng-Cheng¹, Luo Xiao-Rong^{1, 2, †,}

Operation mechanism. (a) On-state: V_GS > V_th, V_GD > 0, V_DS > 0; (b) off-state: V_DS > 0, V_GS = 0, and reverse biased D₂ sustains the V_DG.