Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Luo Jun¹, Zhao Sheng-Lei¹, Mi Min-Han¹, Chen Wei-Wei², Hou Bin², Zhang Jin-Cheng¹, Ma Xiao-Hua^{1, 2}, Hao Yue^{1, †,}

Variations of I_D, I_G, and I_S with V_DS (drain–source voltage) during the breakdown measurements in HEMTs with L_G = 1 μm and L_G = 3 μm.