Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin

Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

Liu Nai-Qing, Huang Li-Jie, Wang Rui-Qiang, Hu Liang-Bin^†,

(a) The variation of the magnitude of the current-induced spin polarization density at a sample point (defined by |k_Fx|=50) in SM with the increase of the interface barrier height (characterized by the dimensionless parameter Z) for several different spin–orbit coupling strengths. (b) The corresponding variation of the charge current density with the increase of the interface barrier height. The parameters are: Δ/E_F = 0.001, eV/Δ = 0.5, β = 0, and α is shown in the inset of the figures.