Bandgap narrowing in the layered oxysulfide semiconductor Ba3Fe2O5Cu2S2: Role of FeO2 layer
Zhang Han1, Jin Shifeng1, †, , Guo Liwei1, Shen Shijie1, Lin Zhiping1, Chen Xiaolong1, 2
       

Band structure (left) and total/atom resolved partial density of states (PDOS) (right) near the Fermi energy for antiferromagnetic Sr3Fe2O5Cu2S2 (a) and Ca2FeO3CuS (b) with U = 5 eV.