Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Zhang Ya-Chao, Zhou Xiao-Wei, Xu Sheng-Rui, Chen Da-Zheng, Wang Zhi-Zhe, Wang Xing, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue

High-resolution XRD triple-axis (0 0 0 6)ω–2θscans of (a) InAlN/InGaN heterostructure and (b) 45-nm InGaN film on GaN buffer.