Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Zhang Ya-Chao, Zhou Xiao-Wei, Xu Sheng-Rui, Chen Da-Zheng, Wang Zhi-Zhe, Wang Xing, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue

Epilayer structures for (a) InAlN/InGaN heterostructure, (b) 45-nm InGaN layer, (c) 7-nm InGaN channel layer, (d) InAlN/GaN heterostructure grown by (pulsed) MOCVD.