Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates
Mao Wei1, †, , She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1
       

Channel electric field distributions for the optimized SD-CFP HEMTs with different number of FFPs.LDFP=LFFP= 0.5 μm,d= 0.104 μm in all devices.