Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates
Mao Wei1, †, 
, She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1
, She Wei-Bo1, Yang Cui2, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Hao Yue1 Nearly optimized channel electric field distributions in four HEMTs.
