Detection efficiency characteristics of free-running InGaAs/InP single photon detector using passive quenching active reset IC

Zheng Fu^{1, 2}, Wang Chao^{1, 3}, Sun Zhi-Bin¹, Zhai Guang-Jie^{1, †,}

Dark count rate versus bias voltage at different deadtimes with respect to gated regime and free-running regime. For example 10 μs__fand 10 μs__gdenotes 10 μs deadtime free-running regime and gated regime, respectively.