Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
Zhong Jiana), Yao Yaoa), Zheng Yuea), Yang Fana), Ni Yi-Qianga), He Zhi-Yuana), Shen Zhena), Zhou Gui-Lina), Zhou De-Qiua), Wu Zhi-Shenga), Zhang Bai-Junb), Liu Yang†a)
       
Calculated concentration N and barrier height ϕ Bn as a function of ICP RF power.