Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
Li Xiao-Jinga), Zhao De-Gang†a), Jiang De-Shenga), Chen Pinga), Zhu Jian-Juna), Liu Zong-Shuna), Le Ling-Cong, Yang Jinga), He Xiao-Guanga), Zhang Li-Qunb), Liu Jian-Ping, Zhang Shu-Mingb), Yang Huia),b)
       
CTLM I – V measurement for four samples with different Cp2Mg flow rates when the spacing of the CTLM pattern is fixed as 30 μm at room temperature. The inset shows the structure diagram of the optimal contact layer for Ni/Au Ohmic contact to p-GaN.