Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
Li Xiao-Jinga), Zhao De-Gang†a), Jiang De-Shenga), Chen Pinga), Zhu Jian-Juna), Liu Zong-Shuna), Le Ling-Cong, Yang Jinga), He Xiao-Guanga), Zhang Li-Qunb), Liu Jian-Ping, Zhang Shu-Mingb), Yang Huia),b)
       
CTLM I − V measurement at room temperature for samples with different p++-GaN thickness (Sample B: 12 nm, Sample C: 19 nm, Sample D: 21 nm, Sample E: 23 nm, Sample A: 25 nm, Sample F: 27 nm, Sample G: 36 nm) when the spacing of the CTLM pattern is fixed as 30 μm.