Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Li Xiao-Jing^a), Zhao De-Gang†^a), Jiang De-Sheng^a), Chen Ping^a), Zhu Jian-Jun^a), Liu Zong-Shun^a), Le Ling-Cong, Yang Jing^a), He Xiao-Guang^a), Zhang Li-Qun^b), Liu Jian-Ping, Zhang Shu-Ming^b), Yang Hui^a),^b)

Semi-logarithmic ln( ρ _p) as a function of T ^{− 1 / 4} for Sample A. The inset shows the schematic energy band diagrams of Ni/Au/p⁺⁺-GaN/p-GaN.