Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces
Xie Ying-Taoa),b), Ouyang Shi-Honga),b), Wang Dong-Pinga),b), Zhu Da-Longa),b), Xu Xina),b), Tan Tea),b), Fong Hon-Hang†a),b)
       
Transfer characteristics of the control reference device with pristine Ag S/D contacts and untreated SiO2 dielectrics.