ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects
Sun Yu†a), Liu Yi-Juna),b), Xu Feia)
       
Configurations of (111) face oxidation at 80 ps. oxidation at (a1) 1000 K, (a2) 2000 K, (a3) 3000 K, (a4) 5000 K. Si(111) oxidation at (b1) 1000 K, (b2) 2000 K, (b3) 3000 K, (b4) 5000 K.