Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
Lü Kai, Jing Chen†, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan, Wang Xi
       
Variations of (a) cut-off frequency ( f T), (b) maximum frequency of oscillation ( f max) extracted by the S-parameters with V BG when V G = 0.8 V and V D = 1.2 V at a frequency of 10 GHz.