Charge trapping behavior and its origin in Al2O3/SiC MIS system
Liu Xin-Yua), Wang Yi-Yua), Peng Zhao-Yanga), Li Cheng-Zhanb), Wu Jiab), Bai Yuna), Tang Yi-Dana), Liu Ke-Anb), Shen Hua-Jun†a)
       
Curves of G p/( ω S ) versus frequency at several biases for a 12.9-nm Al2O3/SiC MIS capacitor. S is the area of the capacitor.