Modulation of electronic properties with external fields in silicene-based nanostructures

Li Geng^a),^b), Zhao Yin-Chang^a),^b), Zheng Rui^a),^b), Ni Jun†^a),^b), Wu Yan-Ning^c)

(a) The band structure of ASiSL (5, 9; 3, 3) with flat bands corresponding to confined states ( E _g = Δ ₁). (b) The Bloch states of the first dispersive and confined state at the Γ point of the Brillouin zone. (c) The variation of the energy gaps of the ASiSL (5, 9; s ₁, 3) from s ₁ = 3 to 8. (d) The variation of the energy gaps of the ASiSL (5, 9; 3, s ₂) from s ₂ = 3 to 8.^{[ 78 ]}