Modulation of electronic properties with external fields in silicene-based nanostructures
Li Genga), b) , Zhao Yin-Changa), b) , Zheng Ruia), b) , Ni Jun†a), b) 
, Wu Yan-Ningc)
, Wu Yan-Ning
Modulation of electronic properties with external fields in silicene-based nanostructures |
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Li Geng
, Wu Yan-Ning |
| (a) The band structure of ASiSL (5, 7; 3, 3) with flat bands corresponding to confined states. Here E g is the band gap of the superlattice; Δ 1 is the energy gap of the highest localized state while Δ 2 is the energy gap for the next dispersive state. (b) The Bloch states of the first dispersive and confined state at the Γ point of the Brillouin zone. (c) The variation of the energy gaps of the ASiSL (5, 7; s 1, 3) from s 1 = 3 to 8. (d) The variation of the energy gaps of the ASiSL (5, 7; 3, s 2) from s 2 = 3 to 8.[ 78 ] |
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