Domain boundaries in silicene: Density functional theory calculations on electronic properties
Xiao Hong-Jun, Zhang Li-Zhi, Du Shi-Xuan†, Gao Hong-Jun
       
Electronic structures of the 1D 4|8 silicene defect. (a) The band structures and the density of states of the perfect silicene and the 1D 4|8 silicene defect. (b) Charge density distributions for the lowest conduction band, top view and side view, (c) charge density distributions for the highest valance band, top view and side view (iso-surface = 0.005 e/Å3).