Effect of body biasing on single-event induced charge collection in deep N-well technology
Ding Yia) , Hu Jian-Guo†a) 
, Qin Jun-Ruib) , Tan Hong-Zhoua)
, Qin Jun-Rui
Effect of body biasing on single-event induced charge collection in deep N-well technology |
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Ding Yi
, Qin Jun-Rui |
| Hole current of pMOSFET source as V sb is 0.6 V at 300 K and 400 K. |
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