Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer
Shi Zhen-Liang, Ji Yun, Yu Wei†, Yang Yan-Bin, Cong Ri-Dong, Chen Ying-Juan, Li Xiao-Wei‡, Fu Guang-Sheng
       
Variations of C −2 with V for the cell A (a) and cell B (b), fitted from 0 V to 0.5 V and beyond 0.5 V is used to calculate the slop.