Modulation of WN x/Ge Schottky barrier height by varying N composition of tungsten nitride*
Wei Jiang-Bina), Chi Xiao-Weia), Lu Chaoa), Wang Chena), Lin Guang-Yanga), Wu Huan-Daa), Huang Wei†a), Li Cheng‡a), Chen Song-Yana), Liu Chun-Lib)
       
Schematic band diagram of the pinning-alleviated WN x /n-Ge (a) and WN x /p-Ge (b) contacts by the interfacial dipoles layer. Here, E c is the conduction band edge, E v is the valence band edge, and E F is the Fermi level.