Modulation of WN<sub><em> x</em></sub>/Ge Schottky barrier height by varying N composition of tungsten nitride<xref ref-type="fn" rid="cpb143144fn1">*</xref>

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride*

Wei Jiang-Bin^a), Chi Xiao-Wei^a), Lu Chao^a), Wang Chen^a), Lin Guang-Yang^a), Wu Huan-Da^a), Huang Wei†^a), Li Cheng‡^a), Chen Song-Yan^a), Liu Chun-Li^b)

Sheet resistance of the WN_x film fabricated with various rates of N₂ flow from 0 sccm to 35 sccm.