Energy distribution extraction of negative charges responsible for positive bias temperature instability<xref ref-type="fn" rid="cpb143016fn1">*</xref>

Energy distribution extraction of negative charges responsible for positive bias temperature instability*

Ren Shang-Qing†, Yang Hong, Wang Wen-Wu‡, Tang Bo, Tang Zhao-Yun, Wang Xiao-Lei, Xu Hao, Luo Wei-Chun, Zhao Chao, Yan Jiang, Chen Da-Peng, Ye Tian-Chun

Band diagram of silicon/high- k /metal gate stacks. The gray shadow area is the energy range that is strongly influenced by the stress, and the blue shadow area is the energy range that is not influenced by the stress.