Progress and prospects of GaN-based LEDs using nanostructures<xref ref-type="fn" rid="cpb150908fn1">*</xref>

Progress and prospects of GaN-based LEDs using nanostructures*

Zhao Li-Xia†, Yu Zhi-Guo, Sun Bo, Zhu Shi-Chao, An Ping-Bo, Yang Chao, Liu Lei, Wang Jun-Xi, Li Jin-Min

Schematics of (a) the overgrowth process and the formation of dislocations, stacking faults, and voids at the initial stage of epitaxy, and (b) four mechanisms that might account for the reduction of the TDD.^{[ 14 ]}