GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges<xref ref-type="fn" rid="cpb150941fn1">*</xref>

GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges*

Wu Jie-Jun, Wang Kun, Yu Tong-Jun†, Zhang Guo-Yi

Images of the apex of hillocks. Scale bars are 0.5 μm for all images. Panels (a) and (b) are AFM topography image and CL image of the same hillock associated with one threading dislocation. Panels (c) and (d) are SEM and CL images of other two hillocks associated with two dislocations.^{[ 44 ]}