Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure*
Tong Xiao-Lina),b), Xia Xiao-Zhib), Li Qing-Xiaa)†
       
(a) On/off switching states of S3 device measured in air and a vacuum at an incident light density of 0.26 mW/cm−2 and a bias voltage of 10 V, (b) band-edge diagrams of a single grain boundary of ZnO before and after UV, depicting the change in Shottky-barrier height.