Progress in research of GaN-based LEDs fabricated on SiC substrate*
Xu Hua-Yonga),b), Chen Xiu-Fanga), Peng Yana), Xu Ming-Shenga),c), Shen Yana),c), Hu Xiao-Boa)†, Xu Xian-Ganga),c)
       
Simulated relative light output intensity of the FC-SLEDs as a function of oblique angle of SiC sidewall. Inset indicates oblique angle α .[ 27 ]