Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes*
Wang Lai†, Yang Di, Hao Zhi-Biao, Luo Yi
       
Schematic diagram of growth interruption method: (a) deposite InGaN film on GaN first; (b) growth interruption and adatoms migrate on the surface to form dots; (c) regrowth of InGaN to enlarge dots.