Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes*
Wang Lai†, Yang Di, Hao Zhi-Biao, Luo Yi
       
Schematic diagram of alternate admittance of precursors to form QDs: (a) metal precursors injection; (b) metal dots formation; (c) nitrogen precursors injection; (d) InGaN QDs formation.