Design of patterned sapphire substrates for GaN-based light-emitting diodes
Wang Hai-Yana) , Lin Zhi-Tinga) , Han Jing-Leia) , Zhong Li-Yia) , Li Guo-Qianga), b) 
Design of patterned sapphire substrates for GaN-based light-emitting diodes |
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Wang Hai-Yan
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| EL spectra from LED chips grown on HPSS, SCPSS, and a commercial PSS. The SCPSS is of optimal dimensions: 3.4 μm in radius, 2.78 μm in height with 1.7 μm edge spacing, and the HPSS is 3.45 μm in radius with 1.6 μm in edge spacing which is the SCPSS intercepted with an interception ratio of 0.8. |
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