Dynamical characteristics of an HP memristor based on an equivalent circuit model in a chaotic oscillator*
Yuan Fang, Wang Guang-Yi†, Wang Xiao-Yuan
       
Some Multisim simulations to emulate typical hysteresis loop of the real HP memristor device in conditions of (a) k 2 = 11 V; (b) k 2 = 5 V; (c) k 2 = 3.5 V; (d) k 2 = 1.2 V.