Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors*
Fu Zong-Yuana), Zhang Jian-Chib), Hu Jing-Hanga), Jiang Yu-Longb)†, Ding Shi-Jinb)‡, Zhu Guo-Donga)§
       
The influence of ferroelectric switching transient on drain current measurements in an OFeFET. (a) Experimental measurement of ferroelectric switching transient in Al/518 nm P(VDF-TrFE)/Al structure and the fitting curve. Inset indicates the experimental determination of switching time. (b) The change in drain current I ds at Vds = −3 V during ferroelectric switching transient. Ferroelectric switching starts at 0 t s. The open circles labeled by P off and I off indicate the polarization and drain current corresponding to ferroelectric switching from negative to positive polarization state by an erasing gate voltage of +40 V, while the solid circles labeled by P on and I on indicate the polarization and drain current corresponding to ferroelectric switching from positive to negative polarization state by a writing gate voltage of −40 V.