Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors*
Fu Zong-Yuana), Zhang Jian-Chib), Hu Jing-Hanga), Jiang Yu-Longb)†, Ding Shi-Jinb)‡, Zhu Guo-Donga)§
       
Simulation results of the polarization-fatigue-induced degradation of memory performance in OFeFET: degradation of (a) P – V g hysteresis loops and (b) transfer curves with fatigue cycles, (c) decrease of on-state drain current I on and memory window Δ V , and (d) the normalized changes in P r, I on, and Δ V with fatigue cycles.