Asymmetric resistive switching processes in W:AlO x/WO y bilayer devices
Wu Hua-Qiang†, Wu Ming-Hao, Li Xin-Yi, Bai Yue, Deng Ning, Yu Zhi-Ping, Qian He
       
The W:AlO x /WO y bilayer RRAM device is operated at different ambient temperatures. (a) DC I – V sweep under different temperatures; (b) zoom in graph of the RESET switching region; (c) zoom in graph of the SET switching region.