Asymmetric resistive switching processes in W:AlO x/WO y bilayer devices
Wu Hua-Qiang†, Wu Ming-Hao, Li Xin-Yi, Bai Yue, Deng Ning, Yu Zhi-Ping, Qian He
       
(a) DC sweep I – V curves of the fabricated W:AlO x /WO y bilayer RRAM device; (b) pulsed programming measured resistive switching cycles of the fabricated RRAM devices.