Threshold switching uniformity in In<sub>2</sub>Se<sub>3</sub> nanowire-based phase change memory<xref ref-type="fn" rid="cpb142776fn1">*</xref>

Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory*

Chen Jian^a),^b), Du Gang^b), Liu Xiao-Yan^b)†

(a) Simulated temperature distribution in a nanowire-based memory device with 2-V RESET pulses and (b) the corresponding phase distribution. (c) Amorphous thickness U _a grows as the RESET pulse amplitude increases to 3 V.