Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate<xref ref-type="fn" rid="cpb142410fn1">*</xref>

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate*

Ni Yi-Qiang, He Zhi-Yuan, Yao Yao, Yang Fan, Zhou De-Qiu, Zhou Gui-Lin, Shen Zhen, Zhong Jian, Zheng Yue, Zhang Bai-Jun, Liu Yang†

(a) Comparison of the Schottky diode characteristics fabricated on samples B₀ and B₁. The inset shows the reverse-bias current density divided by an electric field versus the square root of the electric field. (b) Intercept S ( T ) versus 1000/ T .